PART |
Description |
Maker |
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
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International Rectifier
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FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series 200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
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IRF[International Rectifier]
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FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET 200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 200 N-Channel MOSFET 200V N-Channel QFET
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20L |
200V N-Channel Logic Level QFET 200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
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MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
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IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)|52AA Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
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International Rectifier, Corp. IRF[International Rectifier]
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IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
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International Rectifier
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IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001 |
200V N-Channel B-FET / Substitute of IRFI630A 200V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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